Effect of high- gate dielectrics on charge transport in graphene-based field effect transistors

The effect of various dielectrics on charge mobility in single-layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though highdielectrics can strongly reduce Coulombic scattering by dielectric screening, scattering from surface phonon modes arising from them wash out this advantage. Calculation shows that within the available choice of dielectrics, there is not much room for improving carrier mobility in actual devices at room temperatures.